Opto Diode Corporation (www.optodiode.com) based in Camarillo, California has a long history of delivering industry-leading photodetectors and LEDs. Available in standard and custom designs, Opto Diode products have supported the photonics industry for over 30 years and earned a reputation for high performance, superior quality and reliability. With the acquisition of International Radiation Detectors (IRD) and the merger of Cal Sensors (CSI), Opto Diode now offers industry-leading performance detectors from the extreme UV to the mid-infrared (mid-IR) regions of the electromagnetic spectrum. The IRD product line detects high energy particles and photons in the UV and X-ray regions. The CSI detectors provide superior sensitivity to discriminate trace gases or detect heat, sparks or flames in the mid-IR spectrum.
Complemented by high performance LEDs with radiometric emissions from 365 to 940 nm and IR emitters covering 1 to 10 microns, Opto Diode supports your measurement needs from prototyping to high volume production. All products are designed and manufactured in the US. The Opto Diode facility is optimized for manufacturing with on-site wafer fabrication, class 1,000 to 10,000 clean rooms, extensive assembly capabilities and packaging expertise, delivering the products you need to fulfill your design requirements. Applying rigorous quality control standards, Opto Diode serves a variety of industries including: medical, test & measurement, military/defense, biotechnology, R&D, entertainment, industrial, aerospace and automotive. For more information, visit www.optodiode.com.
Opto Diode, An ITW Company
1260 Calle Suerte
Camarillo, CA 93012
Contact: Russell Dahl
Opto Diode Corporation, an ITW company, introduces two photodetectors, the AXUV100TF030 and AXUV100TF400, with 100 mm2 active areas and directly deposited thin-film filters for extreme ultraviolet (EUV) detection.
Opto Diode Corporation, an ITW company, introduces the SXUV100TF135 and SXUV100TF135B photodiodes with integrated thin-film filters. The detectors each feature a 100 mm2 active area and a directly-deposited thin-film filter for detection between 12 nm and 18 nm. Both detectors have typical responsivity of 0.09 A/W at 13.5 nm and are optimized for different electrical performance. The photodiodes are ideal for use in applications such as laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light.
Opto Diode Corporation, an ITW company, presents the BXT2-17TF, a single-channel, infrared (IR) detector with an integrated 4.67 µm optical bandpass silicon filter. The high-performance lead selenide (PbSe) cooled device provides excellent sensitivity for industrial carbon monoxide (CO) detection in harsh environments.
Opto Diode Corporation recently introduced the NXIR-5C, a red to near-infrared (NIR) enhanced photodiode with a circular active area of 5 mm2. With a spectral response from 320 nm to 1100 nm, the rugged photodiode is housed in a custom 4.7 mm x 4.9 mm ceramic carrier surface-mount device (SMD) package. The new SMD joins the company’s popular NXIR family of products that is optimized for the near-infrared spectrum.
Opto Diode Corporation introduces the NXIR-RF100C, a red and near-infrared (NIR) enhanced, reduced-footprint, surface-mount device (SMD) photodiode showcased at SPIE’s Photonics West 2017, San Francisco, Jan. 31- Feb. 2 in Opto Diode’s booth # 5628.
At 2016’s Photonics West, Ray Fontayne provided us with a general overview of Opto Diode and the markets they serve.
Renee Dulfer walked us through a position detection system demo that Opto Diode had on display at DSS in 2015. Stick around for the whole thing, we promise the video’s title will make sense if you do.
Renee Dulfer spent some of day two of the exhibition with us giving us an overview of Opto Diode’s recent product expansion via of 2014 merger with CalSensors, but the real fun began when she walked us through their in-booth demonstration. For a better look on how their detectors are used in real world applications, check it out.
Opto Diode’s national sales manager Stan Duda kept us up to date on some new developments at Opto Diode. Watch the video to learn more about a new EUV compatible position sensing detector covering the 0.1 nm to 400 nm spectral range.
Stan Duda, national sales manager for ITW-Opto Diode, gives us some background on his company, a manufacturer of silicon photodiodes, LEDs, LED arrays, and UV/X-Ray photodetectors, at Photonics West 2013.
The AXUV100TF400 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXU100TF400 features typical responsivity of 0.15 A/W at 40 nm with a detection range from 18 nm to 80 nm.
The AXUV100TF030 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXUV100TF030 features typical responsivity of 0.16 A/W at 3 nm and has a detection range from 1 nm to 12 nm.
The NXIR-5C is a red to near-infrared (NIR) enhanced photodiode ideally designed for laser monitoring, medical diagnostic equipment, industrial automation, scientific measurement, and military applications. The NXIR-5C delivers low reverse bias, high sensitivity at 0.62 A/W @ 850 nm and 0.35 A/W at 1064 nm, low dark current at 1nA, low capacitance of 5 pico-farads (pF) at 10 V, and high shunt resistance greater than 100 MΩ.
The new SXUV100TF135B 13.5 nm is a directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135B is optimized for zero bias voltage operation where low dark current is vital, and it features a high shunt resistance greater than 10 MΩ. It offers excellent stability and robust design for use in extreme ultraviolet environments.
The new SXUV100TF135 13.5 nm is a directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135 is optimized for higher speed reverse bias voltage operation, and features low capacitance at 260 pF with a reverse bias voltage of 12 V. It offers excellent stability and robust design for use in extreme ultraviolet environments.