Opto Diode Corporation (www.optodiode.com) based in Camarillo, California has a long history of delivering industry-leading photodetectors and LEDs. Available in standard and custom designs, Opto Diode products have supported the photonics industry for over 30 years and earned a reputation for high performance, superior quality and reliability. With the acquisition of International Radiation Detectors (IRD) and the merger of Cal Sensors (CSI), Opto Diode now offers industry-leading performance detectors from the extreme UV to the mid-infrared (mid-IR) regions of the electromagnetic spectrum. The IRD product line detects high energy particles and photons in the UV and X-ray regions. The CSI detectors provide superior sensitivity to discriminate trace gases or detect heat, sparks or flames in the mid-IR spectrum.
Complemented by high performance LEDs with radiometric emissions from 365 to 940 nm and IR emitters covering 1 to 10 microns, Opto Diode supports your measurement needs from prototyping to high volume production. All products are designed and manufactured in the US. The Opto Diode facility is optimized for manufacturing with on-site wafer fabrication, class 1,000 to 10,000 clean rooms, extensive assembly capabilities and packaging expertise, delivering the products you need to fulfill your design requirements. Applying rigorous quality control standards, Opto Diode serves a variety of industries including: medical, test & measurement, military/defense, biotechnology, R&D, entertainment, industrial, aerospace and automotive. For more information, visit www.optodiode.com.
Opto Diode, An ITW Company
1260 Calle Suerte
Camarillo, CA 93012
Contact: Russell Dahl
The company will premiere the second product in the family of narrow-spectral-output UVLED devices at Photonics West, Feb. 5 - 7, 2019, in Opto Diode’s booth #4539, Moscone Center, San Francisco.
Opto Diode Corporation, an ITW company, introduces the first in a series of ultraviolet light-emitting diodes (UVLEDs), the OD-265-001. The new, narrow-spectral output UVLED is designed for robust and long-lifetime use. The device features include total power output of 0.53 mW (minimum) and 0.68 mW (typical), with peak emission wavelengths at 260 nm (minimum), 265 nm (typical) and 270 nm (maximum). Emission in this wavelength range makes these devices suitable for disinfection applications.
Opto Diode Corporation, an ITW company, announces a new high-speed photodetector, the AXUV63HS1. With a circular active area of 9 mm diameter (typically 63 mm²), the photodiode is ideal for electron detection. The new device joins Opto Diode’s family of AXUV detectors that features high-performance measurement of electrons, photons, or X-rays.
Opto Diode Corporation, an ITW company, introduces a high-speed photodetector with a circular active area of 5 mm diameter (typically 20 mm²). It is ideal for high-speed detection of low-energy electrons or X-rays. The AXUV20HS1 is one of several AXUV detectors that feature high performance measurement of photons, electrons, or X-rays.
Opto Diode Corporation, an ITW company, introduces AXUV20A Circular Photodetectors for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near- infrared (IR) wavelength ranges. The circular device, with an active area of 5.5 mm diameter, features sensitivity to low energy electrons.
At 2016’s Photonics West, Ray Fontayne provided us with a general overview of Opto Diode and the markets they serve.
Renee Dulfer walked us through a position detection system demo that Opto Diode had on display at DSS in 2015. Stick around for the whole thing, we promise the video’s title will make sense if you do.
Renee Dulfer spent some of day two of the exhibition with us giving us an overview of Opto Diode’s recent product expansion via of 2014 merger with CalSensors, but the real fun began when she walked us through their in-booth demonstration. For a better look on how their detectors are used in real world applications, check it out.
Opto Diode’s national sales manager Stan Duda kept us up to date on some new developments at Opto Diode. Watch the video to learn more about a new EUV compatible position sensing detector covering the 0.1 nm to 400 nm spectral range.
Stan Duda, national sales manager for ITW-Opto Diode, gives us some background on his company, a manufacturer of silicon photodiodes, LEDs, LED arrays, and UV/X-Ray photodetectors, at Photonics West 2013.
The OD-265-001 is the first model in a series of ultraviolet light-emitting diodes (UVLEDs) designed for robust and long-life use. With features including a power output of 0.53 mW (minimum) and 0.68 mW (typical), with peak emission wavelengths at 260 nm (minimum), 265 nm (typical) and 270 nm (maximum), these devices are especially suitable for disinfection applications.
The AXUV63HS1 high-speed photodetector is designed with a circular active area of 9 mm diameter and is ideally suited for electron detection. This detector features a typical rise time of 10 nsec, a minimum dark current of 100 nA, and a minimum reverse breakdown voltage of 160 V. Storage and operating temperatures range from -10 °C to +40 °C (ambient) and from -20 °C to +80 °C in nitrogen or vacuum environments.
The AXUV20A Circular Photodetectors are designed specifically for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near-infrared (IR) wavelength ranges. Each circular diode has an active area of a 5.5 mm diameter with excellent sensitivity to low energy electrons.
The AXUV100TF400 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXU100TF400 features typical responsivity of 0.15 A/W at 40 nm with a detection range from 18 nm to 80 nm.
The AXUV100TF030 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXUV100TF030 features typical responsivity of 0.16 A/W at 3 nm and has a detection range from 1 nm to 12 nm.